Samsung Electronics announced that 3D stacked memory cell NAND flash vertical (V NAND) flash is developed and plans for the mass production a world first. The industry competitors are busy to calculate because the 'cost per capacity' of 3D stacked NAND flash is lower than current technology.
SK Hynix and Toshiba, Micron also developed the same technology, but have not yet done the production process.
Samsung's V-NAND includes 128gb density within a single chip through the vertical scaling and vertical cell structure of the product. The firm says that by utilizing 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array, V-NAND can provide over twice the scaling capabilities of 20nm planar, standard NAND flash products.
Existing NAND Flash memory products are structured by a single-layer cell developed 40 years ago and it is reached physical limit to increase the capacity. With the introduction of the 10 nanometer process, the electron leakage (interference) is intensifying as the cell gap is significantly narrowed.
Samsung Electronics solved this problem by a single layer of cells arranged in a vertical stackers ('structural innovation' and 'process innovation'). Especially, '3-D cylindrical cells CTF' suppresses the inter-cell interference by storing in a stable non-conductive.
As a result, the writing speed becomes more than two times faster. The cell life which means number of writing will be improved at least two times (up to 10 times longer by product) and the power consumption can be reduced by half.
Samsung Electronics, succeeded through a 10-year study and has applied more than 300 patents around the world including Japan, South Korea and the United States.
NAND flash memory is widely used in memory chips such as in smart phones to store music, photos and video that does not disappear even when the power is turned off.
SK Hynix and Toshiba, Micron also developed the same technology, but have not yet done the production process.
Samsung's V-NAND includes 128gb density within a single chip through the vertical scaling and vertical cell structure of the product. The firm says that by utilizing 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array, V-NAND can provide over twice the scaling capabilities of 20nm planar, standard NAND flash products.
Existing NAND Flash memory products are structured by a single-layer cell developed 40 years ago and it is reached physical limit to increase the capacity. With the introduction of the 10 nanometer process, the electron leakage (interference) is intensifying as the cell gap is significantly narrowed.
Samsung Electronics solved this problem by a single layer of cells arranged in a vertical stackers ('structural innovation' and 'process innovation'). Especially, '3-D cylindrical cells CTF' suppresses the inter-cell interference by storing in a stable non-conductive.
As a result, the writing speed becomes more than two times faster. The cell life which means number of writing will be improved at least two times (up to 10 times longer by product) and the power consumption can be reduced by half.
Samsung Electronics, succeeded through a 10-year study and has applied more than 300 patents around the world including Japan, South Korea and the United States.
NAND flash memory is widely used in memory chips such as in smart phones to store music, photos and video that does not disappear even when the power is turned off.
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